DESCRIPTION
18 dB small signal gain (typ.) 30 dBm saturated power out (typ.) Circuit contains individual source vias Chip Size 4.28 mm x 3.19 mm x 50 μm FEATURES
Absolute Ratings Parameter Positive DC Voltage (+5 V Typical) Negative DC Voltage Simultaneous (Vd - Vg) Positive DC Current RF Input Power (from 50 Ω source) Operating Base plate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Symbol Vd Vg Vdg ID PIN TC TStg Rjc Value +6 -2 +8 1392 18 -30 to +85 -55 to +125 9 Unit Volts Volts Volts mA dBm °C °C °C/W (At 25°C) 50 Ω system, Vd=+5 V, Quiescent current (Idq) = 1000 mA ELECTRICAL CHARACTERISTICS
Parameter Frequency Range Gate Supply Voltage (Vg)1 Gain Small Signal Pin=0 dBm Gain Variation vs. Frequency Power Output at P1 dB Compression Power Output Saturated (Pin=+14.5 dBm) Drain Current at Pin=0 dBm Min 37 Typ -0.2 Max 40 Unit GHz V dB dB dBm dBm mA Parameter Drain Current at P1 dB Compression Drain Current at Psat Power Added Efficiency (PAE) at P1...
