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2SA966 Datasheet PDF

JCET 2SA966

PNP Transistor

Part No. 2SA966
Datasheet 2SA966 Download
Manufacturer
JCET
Description PNP Transistor
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2SA966 datasheet page 1 preview

APPLICATIONS

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MAXIMUM RATINGS

(Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A Pc Collector Power Dissipation 0.9 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ TO-92L 1. EMITTER 2. COLLECTOR 3. BASE

ELECTRICAL CHARACTERISTICS

(Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test conditions V(BR)CBO IC= -1mA , IE=0 V(BR)CEO IC= -10mA ,IB=0