JCET 2SC1627A
NPN TRANSISTOR
MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Power Dissipation Tj Junction Temperature Tstg Storage Temperature Range Value Unit 80 V 80 V 5 V 0.4 A 0.8 W 150 ℃ -55-150 ℃ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(on) fT Test conditions IC=100μA , IE=0 IC=5mA, IB=0 IE=100μA, IC=0 VCB=50V, IE=0 VEB=5V, IC=0 VCE=2 V, IC= 50mA VCE=2 V, IC= 200mA IC= 200m A, IB= 20mA VCE= 2V, IC= 5mA VCE= 10 V, IC= 10mA Min 80 80 5 70 40 0.55 Typ 100 Max Unit V V V 0.1 μA 0.1 μA 240 0.4 V 0.8 V MHz CLASSIFICATION OF hFE...