• Part: 3DD13002N46
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: JCET
  • Size: 1.50 MB
Download 3DD13002N46 Datasheet PDF
JCET
3DD13002N46
FEATURE 3ower 6witching $pplications 1.EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Unit 3. BASE VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 00 V VEBO Emitter-Base Voltage 6V Collector Current -Continuous PC RθJA Collector Power Dissipation Thermal Resistance from Junction to Ambient 0.8 156 W ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0...