The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
BC807U DUAL TRANSISTOR (PNP+PNP)
FEATURE For AF input stages and drive applications High hFE Low VCE(sat) Tow (galvanic) internal isolated transistors with good matching in one package
MARKING: S5B
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RΘJA TJ Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature
Value -50 -45 -5 -0.5 0.