Datasheet Summary
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
BC807U DUAL TRANSISTOR (PNP+PNP)
FEATURE
- For AF input stages and drive applications
- High hFE
- Low VCE(sat)
- Tow (galvanic) internal isolated transistors with good matching in one package
MARKING: S5B
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RΘJA TJ Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature
Value -50 -45 -5 -0.5 0.3 417 150
-55～+150
SOT-363
Unit V V V A W
℃/W ℃ ℃
ELECTRICAL...
