BC848S
BC848S is DUAL TRANSISTOR manufactured by JCET.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
BC848S DUAL TRANSISTOR (NPN+NPN)
APPLICATION
- This device is designed for general purpose amplifier applications
SOT-363
Marking : 2C
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
PD Power Dissipation
RθJA Thermal Resistance from Junction to Ambient
Tj Junction Temperature
Tstg Storage Temperature Range
-55~+150
Units V V V m A m W
℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=10µA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=1m A,IB=0
Emitter-base breakdown...
