Datasheet4U Logo Datasheet4U.com

BZT52C6V2S - ZENER DIODE

This page provides the datasheet information for the BZT52C6V2S, a member of the BZT52C2V4S ZENER DIODE family.

Datasheet Summary

Features

  • z Planar die construction z 200mW power dissipation on ceramic PBC z General purpose, medium current z Ideally suited for automated assembly processes z Available in lead free version SOD-323 Marking: XX= Device code, see table on page2 the marking code The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device . Maximum Ratings (Ta=25℃ unless otherwise specified ) Characteristic Forward Voltage (Note 2) @ IF = 10mA Power Dissipation(Note 1) T.

📥 Download Datasheet

Datasheet preview – BZT52C6V2S

Datasheet Details

Part number BZT52C6V2S
Manufacturer JCET
File Size 875.18 KB
Description ZENER DIODE
Datasheet download datasheet BZT52C6V2S Datasheet
Additional preview pages of the BZT52C6V2S datasheet.

📁 Similar Datasheet

  • BZT52C6V2S - Zener Diode (BLUE ROCKET ELECTRONICS)
  • BZT52C6V2S - 200mW Zener Diode (MCC)
  • BZT52C6V2S - 200mW SURFACE MOUNT ZENER DIODE (WON-TOP)
  • BZT52C6V2S - Surface Mount Zener Diodes (GOOD-ARK)
  • BZT52C6V2S - SURFACE MOUNT SILICON ZENER DIODES (CDIL)
  • BZT52C6V2S - Surface Mount Zener Diodes (Kexin)
  • BZT52C6V2S - SMD Zener Diode (Taiwan Semiconductor)
  • BZT52C6V2S - SURFACE MOUNT ZENER DIODES (Dc Components)
  • BZT52C6V2S - SURFACE MOUNT ZENER DIODE (Diodes)
  • BZT52C6V2S - Surface Mount Zener Diodes (JGD)
Other Datasheets by JCET

Full PDF Text Transcription

Click to expand full text
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BZT52C2V4S-BZT52CS ZENER DIODE FEATURES z Planar die construction z 200mW power dissipation on ceramic PBC z General purpose, medium current z Ideally suited for automated assembly processes z Available in lead free version SOD-323 Marking: XX= Device code, see table on page2 the marking code The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device . Maximum Ratings (Ta=25℃ unless otherwise specified ) Characteristic Forward Voltage (Note 2) @ IF = 10mA Power Dissipation(Note 1) Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Symbol VF PD RθJA Tj Tstg Value 0.
Published: |