CJ2324
CJ2324 is N-Channel MOSFET manufactured by JCET.
FEATURE z Trench FET Power MOSFET z Low RDS(ON) z Surface Mount Package
APPLICATION z DC/DC Converters z Load Switch z LED Backlighting in LCD TVs
MARKING
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
- Repetitive rating：Pluse width limited by junction temperature.
Symbol
VDS VGS ID IDM- RθJA TJ TSTG TL
Value
100 ±20
2 8 357 150 -55~+150 260
Unit
V V A A ℃/W ℃ ℃ ℃
.cj-elec.
A-3,Apr,2015
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
STATIC PARAMETERS
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =100V,VGS = 0V
Gate-body leakage current
IGSS
VGS =±20V, VDS = 0V
Gate threshold voltage(note 1)
VGS(th) VDS =VGS, ID =250µA
VGS =10V, ID =1.5A
Drain-source on-resistance (note 1) RDS(on) VGS =6V, ID =1A
VGS =4.5V, ID =0.5A
Forward tranconductance (note 1) g FS
VDS =20V, ID =1.5A
Diode forward voltage (note...
