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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3400A N-Channel Enhancement Mode Field Effect Transistor
V(BR)DSS
30 V
RDS(on)MAX
32mΩ@10V 38mΩ@4.5V
45mΩ@2.5V
ID
5.8A
SOT-23
1. GATE 2. SOURCE 3. DRAIN
FEATURE
APPLICATION
z High dense cell design for extremely low RDS(ON)
z Load/Power Switching
z Exceptional on-resistance and maximum DC current capability z Interfacing Switching
MARKING
Equivalent Circuit
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed (note 1) Power Dissipation Thermal Resistance from Junction to Ambient (note 2) Junction Temperature Storage Temperature
Symbol VDS VGS ID IDM PD RθJA TJ TSTG
Value 30 ±12 5.