Datasheet Summary
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ8810 N-Channel MOSFET
V(BR)DSS
20V
RDS(on)MAX
26mΩ @10V 27mΩ @4.5V 30 mΩ@3.8V 33mΩ @2.5V 45mΩ @1.8V
FEATURE z Surface Mount Package z Low R DS(on) z ESD Protected Gate
MARKING
SOT-23
7A
1.GATE 2.SOURCE 3.DRAIN
APPLICATION z Load/ Power Switching z Small Portable Electronics
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
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