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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate MOSFETS
CJA9451
V(BR)DSS
-20 V
P-Channel 20-V(D-S) MOSFET
RDS(on)MAX
135mΩ@-4.5V 240mΩ@-2.5V
ID
-2.3A
SOT-89-3L
1. GATE 2. DRAIN 3. SOURCE
Description The Advanced Power MOSFETs provide the desigher with the
best combination of fast switching, ruggedized device desigh, ultra low
on- resistance and cost-effectiveness.
MARKING
Equivalent Circuit
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter Drain-Source Voltage Continuous Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Operating Temperature Storage Temperature
Symbol VDS VGS ID PD RθJA Tj Tstg
Value -20 ±12 -2.3 0.5 250 150 -55 ~+150
Unit
V
A W ℃/W ℃
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CJA9451 Datasheet
