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CJAB35N03 - N-Channel MOSFET

Description

to provide excellent RDS(ON) with low gate charge.

Features

  • High density cell design for ultra low RDS(ON).
  • Fully characterized avalanche voltage and.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD current.
  • Good stability and uniformity with high EAS.

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Datasheet preview – CJAB35N03

Datasheet Details

Part number CJAB35N03
Manufacturer JCET
File Size 1.23 MB
Description N-Channel MOSFET
Datasheet download datasheet CJAB35N03 Datasheet
Additional preview pages of the CJAB35N03 datasheet.

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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD PDFN:%3.3×3.3-8L Plastic-Encapsulate MOSFETS CJAB35N03 V(BR)DSS 30 V N-Channel Power MOSFET RDS(on)MAX ID   7mΩ@10V  12mΩ@4.5V  35A PDFN:%3.3×3.3-8L DESCRIPTION The CJAB35N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES  High density cell design for ultra low RDS(ON)  Fully characterized avalanche voltage and  Excellent package for good heat dissipation  Special process technology for high ESD current  Good stability and uniformity with high EAS APPLICATIONS capability  High side switch in POL DC/DC converter MARKING  Secondary side synchronous rectifier EQUIVALENT CIRCUIT CJAB35N03 = Part No.
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