Full PDF Text Transcription for CJAB35N03 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
CJAB35N03. For precise diagrams, and layout, please refer to the original PDF.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD PDFN:%3.3×3.3-8L Plastic-Encapsulate MOSFETS CJAB35N03 V(BR)DSS 30 V N-Channel Power MOSFET RDS(on)MAX ID 7mΩ@10V 12mΩ@...
View more extracted text
35N03 V(BR)DSS 30 V N-Channel Power MOSFET RDS(on)MAX ID 7mΩ@10V 12mΩ@4.5V 35A PDFN:%3.3×3.3-8L DESCRIPTION The CJAB35N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and Excellent package for good heat dissipation Special process technology for high ESD current Good stability and uniformity with high EAS APPLICATIONS capability High side switch in POL DC/DC converter MARKING Secondary side synchronous rectifier EQUIVALE
CJAB35N03 Datasheet
