Full PDF Text Transcription for CJAB35P03 (Reference)
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CJAB35P03. For precise diagrams, and layout, please refer to the original PDF.
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3×3.3-8L Plastic-Encapsulate MOSFETS CJAB35P03 P-Channel Power MOSFET V(BR)DSS RDS(on)MAX -30V 15mΩ@ -10V ID -35...
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5P03 P-Channel Power MOSFET V(BR)DSS RDS(on)MAX -30V 15mΩ@ -10V ID -35A PDFNWB3.3×3.3-8L DESCRIPTION The CJAB35P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS APPLICATIONS Battery and loading switching MARKING CJAB 35P03 XX CJAB35P03 = Part No.
CJAB35P03 Datasheet
