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CJAB35P03 - P-Channel Power MOSFET

Description

The CJAB35P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

  • High density cell design for ultra low RDS(ON).
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.

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Datasheet preview – CJAB35P03

Datasheet Details

Part number CJAB35P03
Manufacturer JCET
File Size 1.48 MB
Description P-Channel Power MOSFET
Datasheet download datasheet CJAB35P03 Datasheet
Additional preview pages of the CJAB35P03 datasheet.

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Full PDF Text Transcription

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3×3.3-8L Plastic-Encapsulate MOSFETS CJAB35P03 P-Channel Power MOSFET V(BR)DSS RDS(on)MAX -30V 15mΩ@ -10V ID -35A PDFNWB3.3×3.3-8L DESCRIPTION The CJAB35P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES  High density cell design for ultra low RDS(ON)  Fully characterized avalanche voltage and current  Good stability and uniformity with high EAS APPLICATIONS  Battery and loading switching MARKING CJAB 35P03 XX CJAB35P03 = Part No.
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