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CJAC100SN08U - N-Channel Power MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using SGT technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices

Features

  • Battery switch.
  • Load switch.
  • High density cell design for ultra low RDS(ON).
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.

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Datasheet preview – CJAC100SN08U

Datasheet Details

Part number CJAC100SN08U
Manufacturer JCET
File Size 1.73 MB
Description N-Channel Power MOSFET
Datasheet download datasheet CJAC100SN08U Datasheet
Additional preview pages of the CJAC100SN08U datasheet.

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Full PDF Text Transcription

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN:%5×6-8L Plastic-Encapsulate MOSFETS CJAC100SN08U N-Channel Power MOSFET V(BR)DSS RDS(on)TYP ID 80 V 3.0mΩ@10V 100A PDFN:%5×6-8L DESCRIPTION These N-Channel enhancement mode power field effect transistors are using SGT technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency fast switching applications.
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