CJAC100SN08U
Description
These N-Channel enhancement mode power field effect transistors are using SGT technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.These devices are well suited for high efficiency fast switching applications.
Key Features
- Battery switch
- High density cell design for ultra low RDS(ON)
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Applications
- Load Switch
