These N-Channel enhancement mode power field effect transistors are using SGT technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN:%5×6-8L Plastic-Encapsulate MOSFETS CJAC100SN08U N-Channel Power MOSFET V(BR)DSS RDS(on)TYP ID 80 V 3.0mΩ@10V 100A ...
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08U N-Channel Power MOSFET V(BR)DSS RDS(on)TYP ID 80 V 3.0mΩ@10V 100A PDFN:%5×6-8L DESCRIPTION These N-Channel enhancement mode power field effect transistors are using SGT technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency fast switching applications.