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CJAC10H02 - N-Channel MOSFET

Description

The CJAC10H02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • High density cell design for ultra low RDS(ON).
  • Fully characterized avalanche voltage and.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD current.
  • Good stability and uniformity with high EAS.

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Datasheet preview – CJAC10H02

Datasheet Details

Part number CJAC10H02
Manufacturer JCET
File Size 1.17 MB
Description N-Channel MOSFET
Datasheet download datasheet CJAC10H02 Datasheet
Additional preview pages of the CJAC10H02 datasheet.

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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5×6-8L Plastic-Encapsulate MOSFETS CJAC10H0 V(BR)DSS 20 V N-Channel Power MOSFET RDS(on)MAX ID   2.0mΩ@4.5V  2.4mΩ@2.5V  100A PDFNWB5×6-8L DESCRIPTION The CJAC10H02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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