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CJAC10H02 - N-Channel MOSFET

General Description

The CJAC10H02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • High density cell design for ultra low RDS(ON).
  • Fully characterized avalanche voltage and.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD current.
  • Good stability and uniformity with high EAS.

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Datasheet Details

Part number CJAC10H02
Manufacturer JCET
File Size 1.17 MB
Description N-Channel MOSFET
Datasheet download datasheet CJAC10H02 Datasheet

Full PDF Text Transcription for CJAC10H02 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CJAC10H02. For precise diagrams, and layout, please refer to the original PDF.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5×6-8L Plastic-Encapsulate MOSFETS CJAC10H0 V(BR)DSS 20 V N-Channel Power MOSFET RDS(on)MAX ID 2.0mΩ@4.5V 2.4mΩ@...

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 V(BR)DSS 20 V N-Channel Power MOSFET RDS(on)MAX ID 2.0mΩ@4.5V 2.4mΩ@2.5V 100A PDFNWB5×6-8L DESCRIPTION The CJAC10H02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.