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CJAC20N10 - N-Channel MOSFET

Description

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode fast recovery time.

Features

  • High density cell design for ultra low RDS(on) Special process technology for high ESD capability Fully characterized avalanche voltage and current Excellent package for good heat dissipation Good stability and uniformity with high EAS.

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Datasheet preview – CJAC20N10

Datasheet Details

Part number CJAC20N10
Manufacturer JCET
File Size 795.40 KB
Description N-Channel MOSFET
Datasheet download datasheet CJAC20N10 Datasheet
Additional preview pages of the CJAC20N10 datasheet.

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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5X6-8L Plastic-Encapsulate MOSFETS CJAC20N10 N-Channel Power MOSFET V(BR)DSS 10 9 RDS(on)MAX 31Pȍ#9 40Pȍ#9 ID 20$ PDFNWB5×6-8L DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
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