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CJAC50P03 - P-Channel MOSFET

General Description

to provide excellent RDS(ON) with low gate charge.

Key Features

  • High density cell design for ultra low RDS(ON).
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.

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Datasheet Details

Part number CJAC50P03
Manufacturer JCET
File Size 1.15 MB
Description P-Channel MOSFET
Datasheet download datasheet CJAC50P03 Datasheet

Full PDF Text Transcription for CJAC50P03 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CJAC50P03. For precise diagrams, and layout, please refer to the original PDF.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD PDFN:%5×6-8L Plastic-Encapsulate MOSFETS CJAC50P03 P-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID PDFN:%5×6-8L -30V 7mΩ@...

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3 P-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID PDFN:%5×6-8L -30V 7mΩ@-10 V -50A DESCRIPTION The CJAC50P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES  High density cell design for ultra low RDS(ON)  Fully characterized avalanche voltage and current  Good stability and uniformity with high EAS APPLICATIONS  Excellent package for good heat dissipation  Special process technology for high ESD capability  Battery and loading switching MARKING CJAC50P03 = Part No.

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