CJE3139K Datasheet PDF

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS CJE3139K P-Channel MOSFET V(BR)DSS -20V RDS(on)MAX 520 mΩ@-4.5V 700mΩ@-2.5V 950 mΩ(TYP)@-1.8V ID -0.66A SOT-523 1. GATE 2. SOURCE 3. DRAIN FEATURE z Lead Free Product is Acquired z Surface Mount Package z P-Channel Switch with Low RDS(on) z Operated at Low Logic Level Gate Drive MARKING APPLICATION z Load/Power Switching z Interfacing, Logic Switching z Battery Management for Ultra Small Portable Electronics Equivalent Circuit D G Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Typical Gate-Source Voltage Continuous Drain Current (note 1) Pulsed Drain Current (tp=10μs) Power Dissipation (note 1) Thermal Resistance from Junction to Ambient (note 1) Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8” from case for 10 s) S Symbol VDS VGS ID IDM PD RθJA TJ TSTG TL Value -20 ±12 -0.66 -1.2 150 833 150 -55~+150 260 U