CJL3443 Datasheet | JCET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL3443 P-Channel 20-V(D-S) MOSFET FEATURE z Fast Switching Speed z Low Gate Charge z High Performance Trench Technology for extremely Low RDS(on) SOT-23-6L 1. GATE 2. DRAIN 3. SOURCE Description This P-Channel MOSFET is produced using advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation In a very small footprint for applications where the larger packages are impractical. MARKING: R43 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Continuous Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Operating Temperature Storage Temperature Symbol VDS VGS ID PD RθJA Tj Tstg Value -20 ±8 -4 0.35 357 150 -55 ~+150 Unit A W ℃/W ℃ A,Dec,2010 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Off characteristics Drain-source breakdown voltage Gate-body leakage Zero gate voltage drain current On characteristics Gate-threshold voltage Symbol V(BR)DSS IGSS IDSS VGS(th) Static drain-source on-resistance (note 1) RDS(on) Forward transconductance (note 1) gfs Dynamic characteristics (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer...