Full PDF Text Transcription for CJM3005 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
CJM3005. For precise diagrams, and layout, please refer to the original PDF.
N-Channel MOSFET V(BR)DSS RDS(on)MAX ID 42 mΩ@10V 30V 44 mΩ@4.5V 5A 50 mΩ@2.5V DFNWB2×2-6L-J FEATURE z TrenchFET Power MOSFET z Low RDS(ON) z Typical ESD Protection MARKING APPLICATION z Ideal for Load Swith and Battery Protection Applications Equivalent Circuit ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature *Repetitive rating：Pluse width limited by junction temperature. Symbol VDS VGS ID IDM* RθJA TJ TSTG Value 30 ±10 5 20 250 150 -
CJM3005 Datasheet
