JCET CJMN2012
N-Channel Power MOSFET
FEATURES
● TrenchFET Power MOSFET● Small package DFNWB2×2-6L-J MARKING: APPLICATION
● Load Switch for Portable
APPLICATIONS
Equivalent CircuitABSOLUTE MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol Para meter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current (note 1) IDM Collector Current-Pulse(Note3) RθJA Thermal Resistance from Junction to Ambient (note 2) Tj Junction Temperature Tstg Storage Temperature TL Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) Value 20 ±10 12 40 167 150 -55~+150 260 1 Unit V V A A ℃/W ℃ ℃ ℃ C,Aug,2015 026)(7 (/(&75,&$/ &+$5$&7(5,67,&6 Ta=25 Я unless otherwise specified Parameter Symbol Test Condition STAT