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CJS8810 - Dual N-Channel MOSFET

Datasheet Summary

Description

RDS(ON) and low gate charge.

It is ESD protected.

common-drain configuration.

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Datasheet Details

Part number CJS8810
Manufacturer JCET
File Size 684.43 KB
Description Dual N-Channel MOSFET
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD CJS8810 V(BR)DSS 20V   TSSOP8 Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET RDS(on)MAX  20mΩ@10V 22mΩ @4.5V 24 mΩ@3.8V 26mΩ@2.5V 35mΩ@1.8V ID   7A   TSSOP8 DESCRIPTION The CJS8810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. MARKING: Equivalent Circuit S8810 YY S8810= Device code , YY=Date Code Solid dot=Pin1 indicator Solid dot = Green molding compound device, if none,the normal device.
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