CJT04N15
CJT04N15 is N-Channel Power MOSFET manufactured by JCET.
DESCRIPTION
This CJT04N15 use advanced trench technology and design to provide excellent RDS(ON) with low gate charge.It can be used in a wide variety of applications.
SOT-223
1. GATE 2. DRAIN 3. SOURCE
12 3
FEATURE z High density cell design for ultra low RDS(ON) z Fully characterized avalanche voltage and current z Excellent package for good heat dissipation
MARKING
T04N15 151
T04N15= Device code 151 =Code
EQUIVALENT CIRCUIT
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(note1) Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Maximum lead temperure for soldering purposes , 1/8”from case for 5 seconds
Symbol VDS VGS ID IDM RθJA TJ TSTG
Value 150...
