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CJU02N60 - N-Channel Power MOSFET

General Description

to provide enhanced voltage-blocking capability without degrading performance over time.

In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes .

Key Features

  • z Robust High Voltage Termination z Avalanche Energy Specified z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fas.

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Datasheet Details

Part number CJU02N60
Manufacturer JCET
File Size 233.89 KB
Description N-Channel Power MOSFET
Datasheet download datasheet CJU02N60 Datasheet

Full PDF Text Transcription for CJU02N60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CJU02N60. For precise diagrams, and layout, please refer to the original PDF.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate MOSFETS CJU02N60 N-Channel Power MOSFET General Description The high voltage MOSFET uses an ...

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nnel Power MOSFET General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time.