• Part: D2396
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: JCET
  • Size: 369.11 KB
Download D2396 Datasheet PDF
JCET
D2396
FEATURES - Available in TO-220 F package - Darling connection provides high dc current gain (h FE) - Large collector power dissipation - Low frequency and Power amplifier MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature 1. BASE 2. COLLECTOR 3. EMITTER Value 80 60 6 3 2 62.5 150 -55~+150 Unit V V V A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Collector-base breakdown voltag V(BR)CBO IC=50μA, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=1m A,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=50u A,IC=0 Collector cut-off current ICBO VCB=80V,IE=0 Emitter cut-off current DC current gain Collector-emitter saturation voltage IEBO h FE-...