• Part: D882M
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: JCET
  • Size: 586.88 KB
Download D882M Datasheet PDF
JCET
D882M
FEATURES Power Dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 40 30 5 3 1.25 150 -55-150 Unit V V V A W ℃ ℃ 1. BASE 2. COLLECTOR 3 .EMITTER ELECTRICAL CHARACTERISTICS ( Ta=25℃ unless otherwise specified ) Parameter Symbol Test conditions Min Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO h FE VCE (sat) VBE (sat) f T IC = 100μA, IE=0 IC...