JCET DAN202
SWITCHING DIODE
FEATURES
● High Speed● High Reliability
● Suitable for High Packing Density Layout
APPLICATIONS
● High Speed Switching MARKING: N N SOT-23MAXIMUM RATINGS
( Ta=25℃ unless otherwise noted ) Symbol Parameter VR DC Blocking Voltage IO Continuous Forward Current IFM Peak Forward Current IFSM Non-repetitive Peak Forward Surge Current@t= 8 . 3 m s PD Power Dissipation RθJA Thermal Resistance from Junction to Ambient Tj Junction Temperature Tstg Storage Temperature Value 80 100 300 2 250 500 150 -55~+150 Unit V mA mA A mW ℃/W ℃ ℃ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Reverse voltage Reverse current Forward voltage Total capacitance Reverse recovery time Symbol V(BR) IR VF Ctot trr Test conditions IR=100μA VR=70V IF=100mA VR=6V,f=1MHz IF= IR=5mA, VR=6V Min Typ Max 80 0.1 1.2 3.5 4 Unit V μA V pF ns 1 B,Oct,2014 FORWARD CURRENT I (mA) F Ta=100℃ Ta=25℃ REVERSE CURRENT I (nA) R Typical Characteristics Forward Characteristics 100 30 10 3 1 0.3 0.1 0.0 0.2 0.4 0.6...