JCET EMB4
Dual Digital Transistors
FEATURES
z Two DTA114T chips in a package Marking: B4 Absolute maximum ratings (Ta=25℃) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage TemperatureELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Intput resistance Symbol Test conditions V(BR)CBO IC=-50μA, IE=0 V(BR)CEO IC=-1mA, IB=0 V(BR)EBO IE=-50μA, IC=0 ICBO VCB=-50V, IE=0 IEBO VEB=-4V, IC=0 hFE VCE=-5V, IC=-1mA VCE(sat) IC=-10mA, IB=-1mA fT VCE=-10V, IC=-5mA, f=100MHz R1 - Valu