EMB4
FEATURES z Two DTA114T chips in a package
Marking: B4
Absolute maximum ratings (Ta=25℃)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Intput resistance
Symbol
Test conditions
V(BR)CBO IC=-50μA, IE=0
V(BR)CEO IC=-1m A, IB=0
V(BR)EBO IE=-50μA, IC=0
ICBO
VCB=-50V, IE=0
IEBO VEB=-4V, IC=0 h FE VCE=-5V, IC=-1m A
VCE(sat) IC=-10m A, IB=-1m A f T VCE=-10V, IC=-5m A, f=100MHz
R1
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