JCET IRFB640
The TO-220-3L package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220-3L contribute to its wide acceptance throughout the industry.| Part No. | IRFB640 |
|---|---|
| Datasheet | IRFB640 Download |
| Manufacturer |  JCET |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
1. GATE 2. DRAIN 3. SOURCE Third Generation HEXFETs from internation Rectifier provide the designer with the best combination of fast switching ,ruggedized device design,low on-resistance and cost effectiveness.MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted ) Symbol Parameter ID Continuous Drain Current, VGS @ 10 V PD Power Dissipation Linear Derating Factor VGS EAS RθJA TJ TSTG Gate-Souse Voltage Single Pulse Avalanche Energy (note 1) T
