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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-263-2L Plastic-Encapsulate MOSFETS
IRFB640 MOSFET( N-Channel )
TO-263-2L
FEATURE
z Dynamic dv/dt Rating
z Repetitive Avalanche Rated
z Fast Switching
z Ease of Paralleling
z Simple Drive Requirement
DESCRIPTION
1. GATE 2. DRAIN 3. SOURCE
Third Generation HEXFETs from internation Rectifier provide the
designer with the best combination of fast switching ,ruggedized device
design,low on-resistance and cost effectiveness.
The TO-220-3L package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220-3L contribute to its wide
acceptance throughout the industry.
IRFB640 Datasheet
