KTC3192
KTC3192 is NPN Transistor manufactured by JCET.
FEATURE
High Power Gain: Gpe=29d B(Typ)(f=10.7MHZ)
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
35 V
VCEO
Collector-Emitter Voltage
30 V
VEBO
Emitter-Base Voltage
4V
IC Collector Current -Continuous 50 m A
PC Collector Power Dissipation 625 m W
Tj Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
1.EMITTER 2. COLLECTOR 3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
Collector-base time constant
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO h FE VCE(sat)...
