JCET KTC3203
NPN Transistor
FEATURES
z Complementary to KTA1271MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 35 30 5 800 625 150 -55-150 Unit V V V mA mW ℃ ℃ 1. EMITTER 2. COLLECTOR 3. BASEELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Collector-base breakdown voltage V(BR)CBO IC = 0.1mA, IB=0 35 Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 Emitter-base breakdown voltage V(BR)EBO IE= 0.1mA, IC=0 5 Collector cut-off current ICBO VCB= 35V , IE=0 0.1 Collector cut-off current ICEO VCE= 25V , IB=0 0.2 Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 DC curr