JCET M28S
NPN Transistor
| Part No. | M28S |
|---|---|
| Datasheet | M28S Download |
| Manufacturer |  JCET |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
● Excellent hFE Linearity● High DC Current Gain
MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 20 VEBO Emitter-Base Voltage 6 IC Collector Current 1 PC Collector Power Dissipation 200 RΘJA Thermal Resistance From Junction To Ambient 625 Tj Junction Temperature Tstg Storage Temperature 150 -55～+150 Unit V V V A mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTORELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO IE=0.1mA, IC=0 Collector cut-off current ICBO VCB=35V, IE=0 Collector cut-off current ICEO VCE=20V, IB=0 Emitter cut-off c