• Part: M28S
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: JCET
  • Size: 580.84 KB
Download M28S Datasheet PDF
JCET
M28S
FEATURES - Excellent h FE Linearity - High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current PC Collector Power Dissipation RΘJA Thermal Resistance From Junction To Ambient Tj Junction Temperature Tstg Storage Temperature 150 -55~+150 Unit V V V A m W ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=0.1m A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=1m A, IB=0 Emitter-base breakdown voltage V(BR)EBO IE=0.1m A, IC=0 Collector cut-off current ICBO VCB=35V, IE=0 Collector cut-off current ICEO VCE=20V, IB=0 Emitter cut-off...