JCET MBR10150
SCHOTTKY BARRIER RECTIFIER
FEATURES
● Schottky Barrier Chip● Guard Ring Die Construction for Transient Protection
● Low Power Loss,High Efficiency
● High Surge Capability
● High Current Capability and Low Forward Voltage Drop
● For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection
APPLICATIONS
1. CATHODE 2. ANODEMAXIMUM RATINGS
( Ta=25℃ unless otherwise noted ) Symbol Parameter VRRM VRWM VR VR(RMS) IO IFSM PD RΘJA Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified output current Non-Repetitive peak forward surge current 8.3ms half sine wave Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature MBR10150 150 105 Value MBR10200 200 10 150 2 50 125 -55~+150 140 Unit V V A A W ℃/W ℃ ℃ ELECT