MBRB10150CT-B Datasheet | JCET

FEATURES - Schottky Barrier Chip - Guard Ring Die Construction for Transient Protection - Low Power Loss,High Efficiency - High Surge Capability - High Current Capability and Low Forward Voltage Drop TO-263-2L 1. ANODE 2. CATHODE 3. ANODE MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter VRRM Peak repetitive reverse voltage VRWM Working peak reverse voltage VR(RMS) IO IFSM PD RΘJA Tj Tstg RMS reverse voltage Average rectified output current Non-Repetitive peak forward surge current 8.3ms half sine wave Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature Value 105 10 120 2 50 125 -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Reverse voltage V(BR) IR=0.1m A Reverse current IR VR=150V Forward...