MBRB10200CT Datasheet PDF

FEATURES

z Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z Low Power Loss,High Efficiency z High Surge Capability z High Current Capability and Low Forward Voltage Drop z For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection

APPLICATIONS

TO-263-2L 1. ANODE 2. CATHODE 3. ANODE

MAXIMUM RATINGS

( Ta=25℃ unless otherwise noted ) Symbol Parameter VRRM VRWM VR VR(RMS) IO IFSM Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified output current Non-Repetitive peak forward surge current 8.3ms half sine wave PD RΘJA Tj Tstg Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature Value 200 140 10 120 2 50 125 -55~+150

ELECTRICAL CHARACTERISTICS

(Ta=25℃ unless otherwise specified)