MMBT3904M
MMBT3904M is NPN Transistor manufactured by JCET.
FEATURE
- plementary to MMBT3906M
- Small Package
MARKING: 1N
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted )
Symbol VCBO VCEO VEBO IC PC RΘJA TJ Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature
Value 60 40 6 0.2 0.1
1250 150 -55~+150
Unit V V V A W
℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency Output capacitance Input capacitance Noise figure Delay time Rise time Storage time Fall time
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICEX IEBO h FE(1) h FE(2) h FE(3) h FE(4) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 f T Cob Cib NF td tr ts tf
Test conditions IC=10µA,IE=0 IC=1m A,IB=0 IE=10µA,IC=0 VCE=30V,VEB(off)=3V VEB=5V,IC=0 VCE=1V,IC=0.1m A VCE=1V,IC=1m A VCE=1V,IC=10m A VCE=1V,IC=50m A IC=10m A,IB=1m A IC=50m A,IB=5m A IC=10m A,IB=1m A IC=50m A,IB=5m A VCE=20V,IC=10m A,f=100MHz VCB=5V,IE=0,f=1MHz VEB=0.5V,IC=0,f=1MHz VCE=5V,IC=0.1m A,f=1MHz,RS=1kΩ
VCC=3V,VBE(off)=-0.5V, IC=10m A,IB1=1m A
VCC=3V,IC=10m A IB1=IB2=1m A
1. BASE 2. EMITTER 3. COLLECTOR
Min Typ Max 60
40 6
50 100 40
0.95 300
4 8
35 35 200 50
Unit V V V n A n A
V V V V MHz p F p F d B ns ns ns...