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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBTA64 TRANSISTOR (PNP)
SOT–23
FEATURES For Applications Requiring High Current Gain
MARKING:2V
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-30
VCEO Collector-Emitter Voltage
-30
VEBO Emitter-Base Voltage
-10
IC Collector Current
-800
PC Collector Power Dissipation
300
RΘJA Thermal Resistance From Junction To Ambient
416
Tj Junction Temperature
150
Tstg Storage Temperature
-55～+150
Unit V V V mA
mW ℃/W
℃ ℃
1. BASE 2. EMITTER 3.
MMBTA64 Datasheet
