SBL1060 Datasheet PDF

FEATURES

● Schottky Barrier Chip
● Guard Ring Die Construction for Transient Protection
● Low Power Loss,High Efficiency
● High Surge Capability
● High Current Capability and Low Forward Voltage Drop
● For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection

APPLICATIONS

1. CATHODE 2. ANODE

MAXIMUM RATINGS

( Ta=25℃ unless otherwise noted ) Symbol Parameter VRRM VRWM VR VR(RMS) IO IFSM PD RΘJA Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified output current@ Tc=95℃ Non-Repetitive peak forward surge current 8.3ms half sine wave Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature SBL 1030 30 21 SBL 1035 35 24.5 Value SBL SBL 1040 1045 40 45 28 31.5 10 250 2 50 125 -55~+150 SBL 1050 50 35 SBL 1060 60 42 Unit V V A A W ℃/W ℃ ℃ 1 B,Oct,2014

ELECTRICAL CHARACTERISTICS

(Ta=25℃ unless otherwise specified) Parameter Symbol Device Test cond...