JCET SD101AW
SCHOTTKY BARRIER DIODE
FEATURES
z Low Forward Voltage Drop z Guard Ring Construction for Transient Protection z Negligible Reverse Recovery Time MARKING: S1 The marking bar indicates the cathodeMAXIMUM RATINGS
andELECTRICAL CHARACTERISTICS
, Single Diode @Ta=25℃ Parameter Symbol Value Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 60 RMS Reverse Voltage VR(RMS) 42 Forward Continuous Current Non-repetitive Peak Forward Surge Current @t=8.3ms IFM IFSM 15 2.0 Power Dissipation Pd 400 Thermal Resistance Junction to Ambient RθJA 250 Junction temperature Tj 125 Storage Temperature TSTG -55~+150 Unit V V mA A mW ℃/W ℃ ℃ Electrical Ratings @Ta=25℃ Parameter Reverse breakdown voltage Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol Min VR 60 VF Typ Max 0.41 1.00 Unit V V IRM 0.2 µA CT 2.0 pF trr 1.0 n s Conditons IR=10µA IF=1.0mA IF=15mA VR=50V VR=0V,f=1.0MHz IF=IR=5mA Irr=0.1XIR,RL=100Ω 1 G,Mar,2015 Typical Characteristics...