FEATURES
Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -180 V 3. BASE VCEO Collector-Emitter Voltage 2SB649 -120 V 2SB649A -160 VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -1.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ BDTICELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage Collector-emitter breakdown voltage V(BR)CBO V(BR)CEO IC =-1mA,IE=0 IC=-10mA,IB=0 2SB649 2SB649A -180 -120 -160 V V Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC =0 -5 V Collector cut-off current ICBO VCB=-160V,IE=0 -10 µA Emitter cut-off current DC current gain IEBO hFE(1) VEB=-4V,IC=0 VCE=-5V,IC=-150mA 2SB649 2SB649A 60 60 -10 µA 320 200 hFE(2) VCE=-5V,IC=-500mA 30 Collector-emitter saturation...
JCST