• Part: 3DD13001B
  • Description: TO-92 Plastic-Encapsulate Transistors
  • Category: Transistor
  • Manufacturer: JCST
  • Size: 192.79 KB
Download 3DD13001B Datasheet PDF
JCST
3DD13001B
FEATURE - power switching applications TO-92 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Fall time Storage time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO h FE(1) h FE(2) VCE(sat) VBE(sat) f T tf t S Test conditions IC= 100μA , IE=0 IC= 1m A , IB=0 IE= 100μA, IC=0 VCB= 600V , IE=0 VCE= 400V, IB=0 VEB=7V,...