JCST BCX38
NPN Transistor
FEATURES
z High DC Current Gain TO – 92 1.EMITTER 2.BASE 3.COLLECTORMAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 80 60 10 0.8 625 200 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage *Pulse test Symbol Test conditions Min Typ Max Unit V(BR)CBO V(BR)CEO* IC= 0.01mA,IE=0 IC=10mA,IB=0 80 60 V V V(BR)E