CJ201NL Datasheet PDF

FEATURES

z High Collector Current Capability z Low Collector-emitter Saturation Voltage z High Efficiency Leading to Less Heat Generation z Reduced PCB Requirements z Alternatived Effectively to MOSFETS in Specific

APPLICATIONS

APPLICATIONS

z Power Management z Peripheral Driver MARKING: 201N

MAXIMUM RATINGS

(Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5V IC Collector Current 1A PC Collector Power Dissipation 300 mW RΘJA Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃

ELECTRICAL CHARACTERISTICS

(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 Collector-emitter breakd