JCST CJ2045
Dual 40V complementary transistors
FEATURES
z 40V complementary device z High hFE z Mounting cost and area can be cut in half MARKING: 2045 EQUIVALENT CIRCUIT SOT-23-6L Tr1 NPN and Tr2 PNPABSOLUTE MAXIMUM RATINGS
(Ta=25℃) Symbol VCBO VCEX VCEO VEBO IC ICM PC RθJA TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current- Peak Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Value NPN PNP 40 -40 40 -40 30 -30 7 -7 1.5 -1.5 5 -5 350 350 357 357 150 -55~+150 Unit V V V V A A mW ℃/W ℃ ℃ B,Dec,2012 Tr1 NPNELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base b