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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
CJ2101 P-Channel 8-V(D-S) MOSFET
FEATURE Leading Trench Technology for Low RDS(on) Extending Battery Life
SOT-323
1. GATE 2. SOURCE 1 3. DRAIN
2
APPLICATIONS z High Side Load Switch z Charging Circuit z Single Cell Battery Applications such as Cell Phones, Digital Cameras ,PDAs, etc
3
MARKING: TS1 Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (tp=10µs) Continuous Source-Drain Diode Current Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature
Symbol
VDS VGS ID IDM IS PD RθJA TJ Tstg
Value
-8.0 ±8.0 -1.4 -3.0 -0.46 0.
CJ2101 Datasheet
