JCST CJ2304
MOSFETS
APPLICATIONS
z Load Switch for Portable Devices z DC/DC Converter MARKING: S4 SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s) Storage Temperature Junction Temperature Symbol VDS VGS ID IDM IS PD RθJA TJ TSTG Value 30 ±20 3.3 15 0.9 0.35 357 150 -55 ~+150 Unit V A W ℃/W ℃ B,Otc,2011 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Static Drain-source breakdown voltage Gate-source threshold voltage Gate-body leakage Zero gate voltage drain current Drain-source on-state resistancea Forward transconductancea Dynamicb Total gate charge Symbol Test condition