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CJ2310 - N-Channel MOSFET

General Description

The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V.

This device is suitable for use as a battery protection or in other switching application.

1.

High power and curren

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Datasheet Details

Part number CJ2310
Manufacturer JCST
File Size 547.14 KB
Description N-Channel MOSFET
Datasheet download datasheet CJ2310 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2310 N-Channel MOSFET V(BR)DSS RDS(on)MAX ID 105mΩ@10 V 60 V 3A 125mΩ@4.5V DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SOT-23 1. GATE 2. SOURCE 3.