Datasheet Summary
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2333 P-Channel MOSFET
SOT-23
DESCRIPTION The CJ2333 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.This device is suitable for use in PWM,load switching and general purpose applications.
1. GATE 2. SOURCE 3. DRAIN
FEATURE
- TrenchFET Power MOSFET
APPLICATION
- DC/DC Converter
- Load Switch for Portable Devices
- Battery Switch
MARKING: S33 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (t=300µs)
Power Dissipation
Thermal Resistance from...