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CJ3401A - MOSFETS

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Datasheet Details

Part number CJ3401A
Manufacturer JCST
File Size 371.70 KB
Description MOSFETS
Datasheet download datasheet CJ3401A Datasheet
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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401A P-Channel Enhancement Mode Field Effect Transistor FEATURE z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability MARKING: R1A SOT-23 1. GATE 2. SOURCE 3. DRAIN G D S Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient (t<5s) Junction Temperature Storage Temperature Symbol VDS VGS ID PD RθJA TJ TSTG Value -30 ±12 -4.
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