DESCRIPTION
MARKING Equivalent Circuit R20=Dev icecode Solid dot = Green molding compound device,if none, the normal device Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Operation Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD RθJA TJ,Tstg Value 20 ±12 6 25 0.35 357 -55 ~+150 Unit V A W ℃/W ℃ 1 Rev. - 2.0 MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified Parameter Off Characteristics Drain-source breakdown voltage Symbol Test Condition V(BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current Gate-source leakage current IDSS VDS =16V,VGS = 0V,TJ=25℃ VDS =16V,VGS = 0V,T J=125℃ IGSS VGS =±12V, VDS = 0V On characteristics VGS =10V, ID =6A Drain-source on-resistance② RDS(on) VGS =4.5V, ID =5A VGS =2.5V, ID =4A VGS =1.8V, ID =2A Forward transconductance gFS VDS =5V, ID =3.8A Gate threshold vol...
JCST
